2SC5069 features high current capacity. adoption of mbit process. high dc current gain. low collector-to-emitter saturation voltage. high v ebo . absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 15 v collector current i c 2a collector current (pulse) i cp 4a base current i b 0.4 a collector dissipation p c* 1.5 w junction temperature t j 150 storage temperature t stg -55to+150 * mounted on ceramic board(250mm 2 x0.8mm). smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =20v,i e =0 100 a emitter cutoff current i ebo v eb =10v,i c =0 100 a v ce =5v,i c = 500 ma 800 1500 3200 v ce =5v,i c =1a 600 gain bandwidth product f t v ce =10v,i c =50ma 260 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 27 pf collector-emitter saturation voltage v ce(sat) i c =1a,i b = 20 ma 0.15 0.5 v base-emitter saturation voltage v be(sat) i c =1a,i b = 20 ma 0.85 1.2 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 25 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 15 v turn-on time ton 0.14 s strange time tstg 1.35 s fall time tf 0.1 s dc current gain h fe marking marking cu 2SC5069 smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
|
